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| GaAs Varactor Diodes Hyperabrupt TM (R) MV30011 - MV34010 Features High Q Values for Higher Frequency Performance Large Tuning Ratios Low Reverse Current Gamma Values to 1.5 Available as Bondable Chips and as Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications Description Microsemi's GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical Vapor Deposition technique. The layers are processed at using proprietary techniques resulting in varactors with constant gamma, high Q factor and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to millimeter wave frequencies. Breakdown Voltage 50 mA @ 25C +20 dBm @ 25C -55C to +175C -55C to +200C VCOs Phase-Locked Oscillators High Q Tunable Filters Phase Shifters Pre-Selectors Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The MS3000 Series of products are supplied with a RoHS complaint Gold finish. Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes Hyperabrupt TM (R) MV30011 - MV34010 Gamma = 1.25 High Q Constant Gamma Tuning Varactors (Specifications @ 25C) Gamma = 0.75 Part Number MV32001 MV32002 MV32003 MV32004 MV32005 MV32006 MV32007 MV32008 MV32009 MV32010 CT @ 4 V 10% (pF)1, 3, 4 0.6 1.0 1.2 1.5 1.8 2.2 2.5 3.0 3.6 4.5 Typ. CT @2V / CT @20V5 2.8 3.1 3.2 3.3 3.4 3.5 3.6 3.6 3.7 3.8 Min. VBR @ 10 A (V) 22 22 22 22 22 22 22 22 22 22 Typ. Q @ -4 V2 4000 3000 3000 3000 3000 3000 2500 2500 2000 1500 Part Number MV31001 MV31002 MV31003 MV31004 MV31005 MV31006 MV31007 MV31008 MV31009 MV31010 CT @4V 10% (pF)1, 3, 4 0.6 1.0 1.2 1.5 1.8 2.2 2.5 3.0 3.6 4.5 CT @4 V 10% (pF)1, 3, 4 0.5 0.7 1.0 1.2 1.5 1.8 2.0 2.2 2.7 3.3 3.7 4.7 5.6 6.8 8.2 10.0 Typ. CT @2V / CT @12V5 4.2 5.1 5.4 5.7 5.9 6.2 6.3 6.5 6.7 6.8 Typ. CT @2V / CT @20V5 5.5 6.5 7.7 8.3 9.1 9.6 9.9 10.2 10.8 11.3 11.5 12.0 12.3 12.6 12.9 13.1 Min. VBR @ 10 A (V) 15 15 15 15 15 15 15 15 15 15 Min. VBR @ 10 A (V) 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 Typ. Q @ -4 V2 4000 3000 3000 3000 3000 3000 2000 2000 2000 1500 Gamma = 1.00 Part Number MV30001 MV30002 MV30003 MV30004 MV30005 MV30006 MV30007 MV30008 MV30009 MV30010 CT @4 V 10% (pF)1, 3, 4 0.6 1.0 1.2 1.5 1.8 2.2 2.5 3.0 3.6 4.5 CT @4 V 10% (pF)1, 3, 4 0.6 1.0 1.2 1.5 1.8 2.2 2.5 3.0 3.6 4.5 Typ. CT @2V / CT @12V5 3.2 3.7 3.8 4.0 4.1 4.2 4.3 4.4 4.5 4.5 Typ. CT @2V / CT @20V5 3.9 4.6 4.9 5.2 5.4 5.6 5.8 6.0 6.1 6.3 Min. VBR @ 10 A (V) 15 15 15 15 15 15 15 15 15 15 Min. VBR @ 10 A (V) 22 22 22 22 22 22 22 22 22 22 Typ. Q @ -4V2 4000 3000 3000 3000 3000 3000 2500 2500 2000 1500 Part Number MV31011 MV31012 MV31013 MV31014 MV31015 MV31016 MV31017 MV31018 MV31019 MV31020 MV31021 MV31022 MV31023 Typ. Q @ -4V2 4000 3000 3000 3000 3000 3000 2500 2500 2000 1500 MV31024 MV31025 MV31026 Typ. Q @ -4V2 4000 4000 3000 3000 3000 3000 3000 3000 2000 2000 2000 1500 1500 1500 1500 1500 Part Number MV30011 MV30012 MV30013 MV30014 MV30015 MV30016 MV30017 MV30018 MV30019 MV30020 Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. Tightened tolerances available upon request. 4 Package capacitance is 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon package selection. 1 2 3 Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GaAs Varactor Diodes Hyperabrupt TM (R) MV30011 - MV34010 High Q Constant Gamma Tuning Varactors (Specifications @ 25) Gamma = 1.50 Part Number MV34001 MV34002 MV34003 MV34004 MV34005 MV34006 MV34007 MV34008 MV34009 MV34010 CT @ 4 V 10% (pF)1, 3, 4 0.5 1.0 1.8 2.8 2.2 2.5 3.0 3.8 4.5 10.0 Typ. CT @ 2 V CT @ 12V5 4.5 5.9 7.1 7.3 7.4 7.6 7.9 8.1 8.3 8.9 Min. VBR @ 10 A (V) 15 15 15 15 15 15 15 15 15 15 Typ. Q @ -4 V2 3000 2500 2500 2500 1800 1800 1800 1800 1200 1200 Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. Tightened tolerances available upon request. 4 Package capacitance is 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon package selection. 1 2 3 Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GaAs Varactor Diodes Hyperabrupt TM (R) MV30011 - MV34010 Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 |
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